报告人:缪峰 教授
报告时间:4月28日 中午12:15
报告地点:唐楼 B501
报告题目:Electronic Transport and Device Applications of 2D Materials
Abstract:
During the last decade, tremendous research efforts have been focused on two-dimensional (2D) materials due to their rich physics and great potentials for many applications. Our group is now focusing on electronic transport, electro-mechanical properties, and related device applications of various 2D materials, as well as related van der Waals heterostructures.
The first part of my talk will focus on the electro-mechanical properties of suspended grapheme, which is the thinnest flexible conductive material. I will present the direct observation and controlled creation of one- and two-dimensional periodic ripples in suspended graphene sheets, using both spontaneously and thermally generated strains.We are able to control ripple orientation, wavelength and amplitude by making use of graphene’s negative thermal expansion coefficient and electrostatic force. The latest results on the layer-number dependent positive piezoconductive effect will also be discussed. [1]
The second part of my talk will cover our recent studies on atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, [2] which exhibit interesting in-plane anisotropic transport and mechanical properties. We fabricated mono- and few-layer ReS2 field effect transistors, which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. We further successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. [3]
Reference:
[1] Xu, et al. “The positive piezoconductive effect in graphene”, (2015) (under review)
[2] Feng, Zhou, et al. “Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry”, (2015) (under review)
[3] Liu, Fu, et al. “Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors”, Nat. Comm. (2015) (DOI: 10.1038/ncomms7991)